An investigation has been made of the effects of different pH values of a new electrolyte on the electrical properties of n-type InSb/anodic oxide film structures (MOS). This electrolyte (ACC) consist of 300 mi ethylene glycol: 5-6 ml H2O (18M Omega DI): 7 g diammonium hydrogen citrate. The anodic oxidation is carried out under a constant current density. The interface properties have been determined using C-V characteristics of the MOS structures. The MOS capacitance is measured by a lock-in amplifier technique at 77 K in the frequency range 1 to 100 kHz. Furthermore, from the relation between the applied voltage steady-state current at room temperature, it has been seen that the dependence of the current on the voltage differs from sample to sample. The interface hysteresis state densities for the InSb MOS structure corresponding to each pH value of the electrolyte are calculated. These values are in close agreement with those reported by other workers. These values, in device applications of InSb, seem to be satisfactory especially for the sample formed with pH = 7 of this electrolyte.