Influence of indium on the parameters of ZnS thin films and ZnS/CuInS2 cells


Serkis Yesilkaya S. S. , Ulutas U.

Materials Letters, vol.315, 2022 (Journal Indexed in SCI Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 315
  • Publication Date: 2022
  • Doi Number: 10.1016/j.matlet.2022.131959
  • Title of Journal : Materials Letters
  • Keywords: CuInS2, In doping, Semiconductors, Thin films, ZnS

Abstract

© 2022 Elsevier B.V.ZnS/CuInS2 heterostructure cells fabricated by chemical spray pyrolysis technique with undoped and 5 to 20% indium doped ZnS layer. Effect of In doping on the parameters of ZnS thin films and ZnS/CuInS2 cells were investigated. Band gap energy of ZnS film was decreased to 3.26 eV from 3.66 eV and resistivity of the film was decreased to 1.80 × 105 Ω.cm from 5.20 × 105 Ω.cm with increasing In doping concentration. Photovoltaic performance of ZnS/CuInS2 heterostructure cell was improved and power conversion efficiency was increased to 6.02% from 3.90% as a result of increased Voc, Jsc and FF.