Instability phenomenon originated from disordered layer of plasma deposited BN filmc-Si interface assessed through MIS structure by admittance measurement


ÖZDEMİR O. , Anutgan M., Anutgan T. A. , Atılgan İ., Katırcıoğlu B.

Semiconductor Science and Technology, vol.23, 2008 (Journal Indexed in SCI Expanded)

  • Publication Type: Article / Article
  • Volume: 23
  • Publication Date: 2008
  • Title of Journal : Semiconductor Science and Technology