Instability phenomenon originated from disordered layer of plasma deposited BN filmc-Si interface assessed through MIS structure by admittance measurement | AVESİS

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Instability phenomenon originated from disordered layer of plasma deposited BN filmc-Si interface assessed through MIS structure by admittance measurement

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ÖZDEMİR O., Anutgan M., Anutgan T. A., Atılgan İ., Katırcıoğlu B.

Semiconductor Science and Technology, vol.23, 2008 (SCI-Expanded)

Publication Type: Article / Article
Volume: 23
Publication Date: 2008
Journal Name: Semiconductor Science and Technology
Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Yıldız Technical University Affiliated: Yes