Instability phenomenon originated from disordered layer of plasma deposited BN filmc-Si interface assessed through MIS structure by admittance measurement | AVESİS

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Instability phenomenon originated from disordered layer of plasma deposited BN filmc-Si interface assessed through MIS structure by admittance measurement

ÖZDEMİR O. , Anutgan M., Anutgan T. A. , Atılgan İ., Katırcıoğlu B.

Semiconductor Science and Technology, vol.23, 2008 (Journal Indexed in SCI Expanded)

Publication Type: Article / Article
Volume: 23
Publication Date: 2008
Title of Journal : Semiconductor Science and Technology