Electrical and photovoltaic properties of Cr/Si Schottky diodes

Tatar B., BULGURCUOĞLU A. E., Gokdemir P., Aydogan P., Yilmazer D., ÖZDEMİR O., ...Daha Fazla

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, cilt.34, sa.12, ss.5208-5212, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 34 Sayı: 12
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.ijhydene.2008.10.040
  • Dergi Adı: INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.5208-5212
  • Anahtar Kelimeler: Cr/Si Schottky diodes, Electrical properties, Photovoltaic properties, I-V, STATES, OXIDE
  • Yıldız Teknik Üniversitesi Adresli: Evet

Özet

The electrical properties of the Cr/p-Si(111) and Cr/n-Si(100) junctions were investigated through capacitance-voltage and current-voltage measurements, performed under dark and light conditions at room temperature. Diode parameters of Cr/Si Schottky diode like ideality factor and barrier height were obtained and variations of them were monitored as a function of temperatures. Also, an attempt to explore the governing current flow mechanism was tried. The reverse biased I-V measurement under illumination exhibited anomalous behavior as well as high photosensitivity. The former was explained in terms of minority carrier injection phenomenon. The photovoltaic parameters, such as open circuit voltage and short circuit current were obtained as 370 mV and I(sc) = 44.5 mu A, respectively. (c) 2008 International Association for Hydrogen Energy. Published by Elsevier Ltd. All rights reserved.