Bridged oxide nanowire device fabrication using single step metal catalyst free thermal evaporation


COŞKUN M., OMBABA M. M. , DUMLUDAĞ F., ALTINDAL A. , ISLAM M. S.

RSC ADVANCES, vol.8, no.19, pp.10294-10301, 2018 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 8 Issue: 19
  • Publication Date: 2018
  • Doi Number: 10.1039/c7ra11987a
  • Title of Journal : RSC ADVANCES
  • Page Numbers: pp.10294-10301

Abstract

In this study, indium-tin-zinc-oxide (ITZO) and Zn doped In2O3 nanowires were directly grown as bridged nanowires between two heavily doped silicon (Si) electrodes on an SOI wafer using single step vapor-solid-solid (VSS) growth method. SEM analysis showed highly dense and self aligned nanowire formation between the Si electrodes. Electrical and UV response measurements were performed in ambient condition. Current-voltage characteristics of devices exhibited both linear and non-linear behavior. This was the first demonstration of bridged ITZO and Zn-doped In2O3 nanowires. Our results show that bridged nanowire growth technique can be a potential candidate for high performance electronic and optoelectronic devices.