Comparing different switching techniques for Silicon Carbide MOSFET assisted Silicon IGBT based hybrid switch

ÖZDEMİR S., Acar F., SELAMOĞULLARI U. S.

1st Joint International Aegean Conference on Electrical Machines and Power Electronics, ACEMP 2015, International Conference on Optimization of Electrical and Electronic Equipment, OPTIM 2015 and International Symposium on Advanced Electromechanical Motion Systems, ELECTROMOTION 2015, Side, Türkiye, 2 - 04 Eylül 2015, ss.476-481 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/optim.2015.7427017
  • Basıldığı Şehir: Side
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.476-481
  • Anahtar Kelimeler: hybrid switch, Light load efficiency, synchronous rectification
  • Yıldız Teknik Üniversitesi Adresli: Evet

Özet

This study compares different switching techniques for Silicon Carbide (SiC) MOSFET assisted Silicon (Si) IGBT based hybrid snitch and presents the effect of hybrid switch control techniques on the efficiency improvement. The hybrid switch which parallels a IGBT with a SiC MOSFET is proposed as a solution to improve the light load efficiency. The hybrid switch combines desirable properties both IGBT and SiC MOSFET. Different operation modes of hybrid switch are analyzed in PSIM using a simple circuit and if is shown that the hybrid switch performs better compared to IGBT alone operation.