Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy

Kuruoglu N., ÖZDEMİR O., BOZKURT K., BELAHSENE S., MARTINEZ A., RAMDANE A.

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.64, no.7, pp.2881-2885, 2017 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 64 Issue: 7
  • Publication Date: 2017
  • Doi Number: 10.1109/ted.2017.2705719
  • Journal Name: IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.2881-2885
  • Keywords: Capacitance-voltage characteristics, charge carrier mobility, p-i-n diodes, LIGHT-EMITTING-DIODES, QUANTUM-DOT LASERS, VERTICAL CARRIER TRANSPORT, POLY(P-PHENYLENE VINYLENE), MU-M, SEMICONDUCTOR-DEVICES, THRESHOLD CURRENT, TEMPERATURE, WELL, INJECTION
  • Yıldız Technical University Affiliated: Yes

Abstract

Temperature- and field-dependent electron and hole mobilities were simultaneously derived from admittance measurements on an InP/InGaAsP/InAs/InP long wavelength laser structure. Each carrier's mobility was separated in the frequency domain due to the corresponding different relaxation times from C versus log f curves. Derived electron and hole mobilities followed the Poole-Frenkel-type field dependence, indicating the transport of carriers through hopping. Extracted thermal energy gap (Delta) and disorder temperature (T-0) values were in mutual agreement with previous current density-voltage measurements and from the energy band diagram of the present structure, constructed from other studies in the literature by photoluminescence and photoluminescence excitation experiments.