Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy


Kuruoglu N. , ÖZDEMİR O. , BOZKURT K. , BELAHSENE S., MARTINEZ A., RAMDANE A.

IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.64, ss.2881-2885, 2017 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 64 Konu: 7
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1109/ted.2017.2705719
  • Dergi Adı: IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Sayfa Sayısı: ss.2881-2885

Özet

Temperature- and field-dependent electron and hole mobilities were simultaneously derived from admittance measurements on an InP/InGaAsP/InAs/InP long wavelength laser structure. Each carrier's mobility was separated in the frequency domain due to the corresponding different relaxation times from C versus log f curves. Derived electron and hole mobilities followed the Poole-Frenkel-type field dependence, indicating the transport of carriers through hopping. Extracted thermal energy gap (Delta) and disorder temperature (T-0) values were in mutual agreement with previous current density-voltage measurements and from the energy band diagram of the present structure, constructed from other studies in the literature by photoluminescence and photoluminescence excitation experiments.