Effect of Bulk Trap in GaN Barrier Layer on the Electroluminescence Spectral Properties of InGaN/GaN Multiple Quantum Well LED Device

ÖZDEMİR O. , BOZKURT K. , AYARCI N., BAŞ H., ALSHEHRI B., DOGHECHE K., ...More

Turkish Physical Society 35th International Physics Congress, 4 - 08 September 2019

  • Publication Type: Conference Paper / Summary Text