THEORETICAL ANALYSIS OF TEMPERATURE AND DOPING DEPENDENCE OF MATERIAL PARAMETERS IN GaInNAs/GaAs QUANTUM WELLS
ROMANIAN JOURNAL OF PHYSICS, cilt.56, ss.742-748, 2011 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 56
- Basım Tarihi: 2011
- Dergi Adı: ROMANIAN JOURNAL OF PHYSICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.742-748
- Yıldız Teknik Üniversitesi Adresli: Hayır
Özet
The effect of doping and temperature on the gain characteristics of GaInNAs/GaAs quantum well lasers emitting at 1.3 mu m are investigated. The unusual band structure of dilute nitrides is analyzed using the band-anti-crossing model (BAC), effective mass and simple approximate expressions for carrier density and optical gain. A significant reduction in the transparency carrier density by p-type doping and an increase in gain by n-type doping are observed for GaInNAs/GaAs. Our calculations show that doped III-N-V quantum well active layers appear to allow achieving certain benefits to lasers.