THEORETICAL ANALYSIS OF TEMPERATURE AND DOPING DEPENDENCE OF MATERIAL PARAMETERS IN GaInNAs/GaAs QUANTUM WELLS


Oduncuoglu M.

ROMANIAN JOURNAL OF PHYSICS, vol.56, pp.742-748, 2011 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 56
  • Publication Date: 2011
  • Journal Name: ROMANIAN JOURNAL OF PHYSICS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.742-748

Abstract

The effect of doping and temperature on the gain characteristics of GaInNAs/GaAs quantum well lasers emitting at 1.3 mu m are investigated. The unusual band structure of dilute nitrides is analyzed using the band-anti-crossing model (BAC), effective mass and simple approximate expressions for carrier density and optical gain. A significant reduction in the transparency carrier density by p-type doping and an increase in gain by n-type doping are observed for GaInNAs/GaAs. Our calculations show that doped III-N-V quantum well active layers appear to allow achieving certain benefits to lasers.