ROMANIAN JOURNAL OF PHYSICS, cilt.56, ss.742-748, 2011 (SCI İndekslerine Giren Dergi)
The effect of doping and temperature on the gain characteristics of GaInNAs/GaAs quantum well lasers emitting at 1.3 mu m are investigated. The unusual band structure of dilute nitrides is analyzed using the band-anti-crossing model (BAC), effective mass and simple approximate expressions for carrier density and optical gain. A significant reduction in the transparency carrier density by p-type doping and an increase in gain by n-type doping are observed for GaInNAs/GaAs. Our calculations show that doped III-N-V quantum well active layers appear to allow achieving certain benefits to lasers.