Polypropylene/basalt thick film composites: structural, mechanical and dielectric properties

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Alkan U., Karabul Y., Bulgurcuoğlu A. E., Kılıç M., Ozdemir Z., İçelli O.

E-POLYMERS, vol.17, pp.417-425, 2017 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 17
  • Publication Date: 2017
  • Doi Number: 10.1515/epoly-2017-0035
  • Journal Name: E-POLYMERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.417-425
  • Keywords: impedance spectroscopy, low dielectric material, nearly constant loss model, polypropylene, volcanic basalt rock, AC CONDUCTIVITY, OXIDE GLASSES, TEMPERATURE, DEPENDENCE, CRYSTALS
  • Yıldız Technical University Affiliated: Yes


In this work, polypropylene/volcanic basalt rock (PP/VBR) thick film composites with different VBR powder mass ratio varying from 0.5 wt.% to 20.0 wt.% were prepared by using the hot press technique. The effects of VBR powder doping on mechanical, structural and dielectric properties of PP were investigated by stress- strain measurements, Fourier transform infrared analysis, thermal gravimetric analysis, scanning electron microscopy and dielectric spectroscopy methods. The highest tensile strength, percentage strain and energy at break were achieved for 0.5 wt.% VBR powder doped PP composite. According to the stress- percentage strain curves of the samples, it was observed that 0.5 wt.% VBR powder doping increases the mechanical performance of PP polymer. In addition, regardless of the doping concentration level of basalt powder, the real part of complex dielectric function (epsilon') of all PP composites display approximately frequency independent behavior between 100 Hz and 1 MHz. On the other hand, 0.5 wt.% VBR powder doped PP composite has also the lowest dielectric constant at the vicinity of 2.7 between 100 Hz and 1 MHz. The composite also has considerably low dielectric loss which has a crucial importance for technological applications. For these reasons, PP/0.5 wt.% VBR composite with the highest tensile strength can be considered as a suitable candidate for microelectronic devices. Furthermore, the alternative current conductivity mechanism was determined as nearly constant loss due to approximately constant dielectric loss between 10 Hz and 1 MHz.