Discrimination of Carrier Conduction Mechanisms of InP/InGaAsP/InAs/InP Laser Structure Through J-V-T Measurements


Ayarci N. , ÖZDEMİR O. , BOZKURT K. , RAMDANE A., BELAHSENE S., MARTINEZ A.

IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.63, ss.1866-1870, 2016 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 63 Konu: 5
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1109/ted.2016.2545411
  • Dergi Adı: IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Sayfa Sayıları: ss.1866-1870

Özet

The properties of InP/InGaAsP/InAs/InP laser structure, mainly used in the fiber optic telecommunication industry, were investigated through current density-voltage-temperature (J-V-T) measurement within dark and light conditions. Tunneling and generation-recombination carrier conduction mechanisms were identified within a junction bias voltage of 0-0.6 V. Above 0.6 V, Poole-Frenkel was the actual path in conduction and the mobility of carrier was determined quantitatively by means of temperature-dependent J-V curves in the space charge bias region. A thermal energy gap of 0.8 eV corresponded to the band gap of quantum dashes in which radiative recombination took place to emit a laser light at 1550 nm.