Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors


Ramil A., Singh B., Haber N., Gunes S. , Andreev A., Matt G., et al.

JOURNAL OF CRYSTAL GROWTH, cilt.288, ss.123-127, 2006 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 288 Konu: 1
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1016/j.jcrysgro.2005.12.061
  • Dergi Adı: JOURNAL OF CRYSTAL GROWTH
  • Sayfa Sayısı: ss.123-127

Özet

Hot wall epitaxially grown C-60 based organic field-effect transistors (OFETs) show relatively high electron mobilities of 0.4-1 cm(2)/Vs. We report results of thin film grown with various growth conditions such as preheating and initial substrate temperatures resulting in strikingly different fullerene film nanomorphology. The mobility is enhanced up to 3 cm(2)/Vs for films grown at a substrate temperatures of 130 degrees C. This improvement in the mobility is explained in terms of a transition from a disordered interface consisting of small-elongated grains to a well-ordered C-60 film with bigger and rounder grains. (c) 2005 Elsevier B.V. All rights reserved.