Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors

Ramil A., Singh B., Haber N., Gunes S., Andreev A., Matt G., ...More

JOURNAL OF CRYSTAL GROWTH, vol.288, no.1, pp.123-127, 2006 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 288 Issue: 1
  • Publication Date: 2006
  • Doi Number: 10.1016/j.jcrysgro.2005.12.061
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.123-127
  • Yıldız Technical University Affiliated: Yes


Hot wall epitaxially grown C-60 based organic field-effect transistors (OFETs) show relatively high electron mobilities of 0.4-1 cm(2)/Vs. We report results of thin film grown with various growth conditions such as preheating and initial substrate temperatures resulting in strikingly different fullerene film nanomorphology. The mobility is enhanced up to 3 cm(2)/Vs for films grown at a substrate temperatures of 130 degrees C. This improvement in the mobility is explained in terms of a transition from a disordered interface consisting of small-elongated grains to a well-ordered C-60 film with bigger and rounder grains. (c) 2005 Elsevier B.V. All rights reserved.