JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.7, pp.1517-1522, 2005 (SCI-Expanded)
Secondary transition temperatures of poly (ether imide) films were established below and above glass transition temperature, 220 C by using inverse gas chromatography, do conductivity-temperature and differential scanning calorimeter measurements. The secondary transition temperatures obtained these techniques were compared with the ones obtained by thermally stimulated depolarization current. Electrical characterization of the films having three different dopant concentration of 0.25 mol, 0.50 mol, and 0.75 mol per mol of polymer and the constant sample tickness of 6 mu m was realized on the base of do conductivity-temperature measurements. As doping concentration were increased, it was seen an increase at glass transition temperature.