Determination of the characteristic parameters of Sn/n-gaas/Al-Ge Schottky diodes by a barrier height inhomogeneity model


NUHOĞLU Ç., Yıldırım N., Turut A., Biber M., Ayyıldız E., Nuhoğlu Ç.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.21, no.3, pp.822-828, 2006 (SCI-Expanded)

  • Publication Type: Article / Article
  • Volume: 21 Issue: 3
  • Publication Date: 2006
  • Journal Name: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.822-828
  • Yıldız Technical University Affiliated: No