Determination of the characteristic parameters of Sn/n-gaas/Al-Ge Schottky diodes by a barrier height inhomogeneity model


NUHOĞLU Ç. , Yıldırım N., Turut A., Biber M., Ayyıldız E., Nuhoğlu Ç.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.21, no.3, pp.822-828, 2006 (Journal Indexed in SCI Expanded)

  • Publication Type: Article / Article
  • Volume: 21 Issue: 3
  • Publication Date: 2006
  • Title of Journal : SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Page Numbers: pp.822-828