Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content


Akyol F. , Zhang Y., Krishnamoorthy S., Rajan S.

APPLIED PHYSICS EXPRESS, vol.10, no.12, 2017 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 10 Issue: 12
  • Publication Date: 2017
  • Doi Number: 10.7567/apex.10.121003
  • Title of Journal : APPLIED PHYSICS EXPRESS

Abstract

We report a combination of highly doped layers and polarization engineering that achieves highly efficient blue-transparent GaN/InGaN/GaN tunnel junctions (In content = 12%). NPN diode structures with a low voltage drop of 4.04V at 5 kA/cm(2) and a differential resistance of 6.51 x 10(-5) Omega center dot&cm(2) at 3 kA/cm(2) were obtained. The tunnel junction design with n(++)-GaN (Si: 5 x 10(20)cm(-3))/3nmp(++)- In0.12Ga0.88N (Mg: 1.5 x 10(20) cm(-3))/p(++)-GaN (Mg: 5 x 10(20)cm(-3)) showed the best device performance. Device simulations agree well with the experimentally determined optimal design. The combination of low In composition and high doping can facilitate lower tunneling resistance for blue- transparent light- emitting diodes. (C) 2017 The Japan Society of Applied Physics