Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure

ÖZDEMİR O. , Atılgan İ., Akaoğlu B., Sel K., Katırcıoğlu B.

THIN SOLID FILMS, cilt.497, ss.149-156, 2006 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 497
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1016/j.tsf.2005.10.065
  • Sayfa Sayıları: ss.149-156


A slightly carbon rich hydrogenated amorphous silicon carbide (a-SiCx:H) film was deposited by 13.56 MHz plasma enhanced chemical vapor deposition technique on p-type silicon (p-Si) wafer. Admittance analyses of the metal-insulator-semiconductor device (Al/a-SiCx:H/p-Si)from strong accumulation to strong inversion gate bias were achieved within a widespread frequency range (10(1)-10(6) Hz). An adequate equivalent circuit for each bias regime was proposed. The dependence of the ac conductivity both under strong accumulation and inversion on the frequency power-law was interpreted as due to the carrier exchange mechanism by hopping. (c) 2005 Elsevier B.V All rights reserved.