Power Switching Transistors Based on GaN and AlGaN Channels


Bajaj S., Hung T., Akyol F. , Krishnamoorthy S., Khandaker S., ARMSTRONG A., et al.

3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Virginia, Amerika Birleşik Devletleri, 2 - 04 Kasım 2015, ss.16-20

  • Doi Numarası: 10.1109/wipda.2015.7369292
  • Basıldığı Şehir: Virginia
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Sayfa Sayısı: ss.16-20

Özet

We investigate Al2O3/AlGaN interface in GaN MOSHEMTs to engineer channel mobility and threshold voltage suitable for power switching applications. Using oxygen-plasma and annealing treatments, we find the optimal window for high mobility and threshold voltage. Next, we discuss the power switching figure of merit of high composition AlGaN based HEMTs and their potential to achieve large threshold voltages. Finally, we characterize the electrical properties of the interface between Al2O3/high composition Al0.7Ga0.3N, and measure the conduction band offset of approximately 1 eV with a low positive interface fixed charge density of +2.5 x 10(12) cm(-2).