Power Switching Transistors Based on GaN and AlGaN Channels


Bajaj S., Hung T., Akyol F. , Krishnamoorthy S., Khandaker S., ARMSTRONG A., ...More

3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Virginia, United States Of America, 2 - 04 November 2015, pp.16-20 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/wipda.2015.7369292
  • City: Virginia
  • Country: United States Of America
  • Page Numbers: pp.16-20

Abstract

We investigate Al2O3/AlGaN interface in GaN MOSHEMTs to engineer channel mobility and threshold voltage suitable for power switching applications. Using oxygen-plasma and annealing treatments, we find the optimal window for high mobility and threshold voltage. Next, we discuss the power switching figure of merit of high composition AlGaN based HEMTs and their potential to achieve large threshold voltages. Finally, we characterize the electrical properties of the interface between Al2O3/high composition Al0.7Ga0.3N, and measure the conduction band offset of approximately 1 eV with a low positive interface fixed charge density of +2.5 x 10(12) cm(-2).