Investigation of the transport properties of microcrystalline silicon by time-of-flight (TOF)


Serin M. , Harder N., Carıus R.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.14, pp.733-734, 2003 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 14
  • Publication Date: 2003
  • Doi Number: 10.1023/a:1026151725719
  • Journal Name: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.733-734

Abstract

The transport properties of microcrystalline silicon have been studied by the time-of-flight technique on a 6.3-mum thick n-i-p solar cell illuminated from the p-side (n-side) to obtain electron (hole) current transients. The transients exhibit dispersive behavior. At room temperature, drift-mobility values of about 2-4 cm(2) V(-1) s(-1) and 2 cm(2) V(-1) s(-1) were deduced for electrons and holes, respectively. The dispersion parameters alpha(l) and alpha(2), as determined from the pre- and post-transit slopes of the current transients were similar to those for a-Si:H. (C) 2003 Kluwer Academic Publishers.