Res. Asst. PhD Neslihan AYARCI KURUOĞLU

Publication Network

Articles 12

1. Indium and hafnium chloride modified titanium oxide thin films

AYARCI KURUOĞLU N., CHOI F. P., ÖZDEMİR O.

Optik , vol.283, 2023 (SCI-Expanded, Scopus)

2. Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure

Özdemir O., Baş H., Ayarcı Kuruoğlu N., Bozkurt K., Aydın M., Sarcan F., et al.

Journal of Luminescence , vol.257, 2023 (SCI-Expanded, Scopus)

3. Determination of band tail widths in MOCVD grown InGaN single layer within GaN based p-i-n LED structure through photo-induced measurements

Özdemir O., Bozkurt K., Ayarcı Kuruoğlu N., Baş H., Sarcan F., Erol A., et al.

JOURNAL OF LUMINESCENCE , vol.255, pp.119543, 2023 (SCI-Expanded, Scopus)

4. Investigation of luminescence centers inside InGaN/GaN multiple quantum well over a wide range of temperature and injection currents

Ayarci Kuruoğlu N., Özdemir O., Bozkurt K., Baş H., Alshehri B., Dogheche K., et al.

JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS , vol.00, no.00, 2022 (SCI-Expanded, Scopus)

5. MOCVD ile büyütülen GaN p-i-n yapısındaki sarı ışık merkezinin elektro-optik ölçümlerle incelenmesi

Ayarcı Kuruoğlu N.

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi , vol.12, no.1, pp.207-216, 2022 (TRDizin)

6. Transport and storage dynamics of 30% In-rich InGaN/GaN MQW LED p-i-n structure

Özdemir O., Bozkurt K., Kuruoglu N., Baş H., Alshehrı B., Dogheche K., et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.52, 2019 (SCI-Expanded, Scopus)

7. Impact of trap states on inductive phenomena in 30% InGaN/GaN MOW LED devices

BOZKURT K., ÖZDEMİR O., KURUOGLU N., ALSHEHRI B., DOGHECHE K., Gaimard Q., et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.52, no.10, 2019 (SCI-Expanded, Scopus)

8. Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I-V and admittance measurement

Kuruoglu N., ÖZDEMİR O., BOZKURT K., Sundaram S., Salvestrini J., Ougazzaden A., et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.50, no.50, 2017 (SCI-Expanded, Scopus)

9. Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructures

Ayarcı Kuruoğlu N., Özdemir O., Bozkurt K.

Journal of Materials Science and Chemical Engineering , pp.1-9, 2017 (Peer-Reviewed Journal)

10. Betavoltaic study of a GaN p-i-n structure grown by metal-organic vapour phase epitaxy with a Ni-63 source

Kuruoglu N., ÖZDEMİR O., BOZKURT K.

THIN SOLID FILMS , vol.636, pp.746-750, 2017 (SCI-Expanded, Scopus)

11. Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy

Kuruoglu N., ÖZDEMİR O., BOZKURT K., BELAHSENE S., MARTINEZ A., RAMDANE A.

IEEE TRANSACTIONS ON ELECTRON DEVICES , vol.64, no.7, pp.2881-2885, 2017 (SCI-Expanded, Scopus)

12. Discrimination of Carrier Conduction Mechanisms of InP/InGaAsP/InAs/InP Laser Structure Through J-V-T Measurements

Ayarci N., ÖZDEMİR O., BOZKURT K., RAMDANE A., BELAHSENE S., MARTINEZ A.

IEEE TRANSACTIONS ON ELECTRON DEVICES , vol.63, no.5, pp.1866-1870, 2016 (SCI-Expanded, Scopus)

Papers Presented at Peer-Reviewed Scientific Conferences 14

1. Luminescence Properties of In-Rich InGaN/GaN Multiple Quantum Wells Light Emitting Diodes

BOZKURT K., ÖZDEMİR O., AYARCI KURUOĞLU N., ALSHEHRI B., DOGHECHE K., GAIMARD Q., et al.

Turkish Physical Society 34.th International Physics Congress, Muğla, Turkey, 05 September 2018, (Summary Text)

2. Simultaneous Determination of Electron and Hole Mobility in InGaN/GaN Multi Quantum Well LED Through AC Admittance Spectroscopy

AYARCI KURUOĞLU N., ÖZDEMİR O., BOZKURT K., ALSHEHRI B., DOGHECHE K., GAIMARD Q., et al.

Turkish Physical Society 34.th International Physics Congress, Muğla, Turkey, 05 September 2018, (Summary Text)

3. Light Emission Bands of InGaN/GaN MQW based LED in P-I-N Structures

BAŞ H., ÖZDEMİR O., AYARCI KURUOĞLU N., BOZKURT K., ALSHEHRI B., DOGHECHE K., et al.

Turkish Physical Society 34.th International Physics Congress, Muğla, Turkey, 05 September 2018, (Summary Text)

4. Determination of Conduction Path in InGaN/GaN MQW LED by Current-Voltage and Admittance Measurements

ÖZDEMİR O., AYARCI KURUOĞLU N., BOZKURT K., BAŞ H., ALSHEHRI B., DOGHECHE K., et al.

Turkish Physical Society 34.th International Physics Congress, Muğla, Turkey, 05 September 2018, (Summary Text)

5. Effect of Ni-63 Radiations on MBE Grown GaN in p-i-n Structure by Admittance Spectroscopy

BOZKURT K., AYARCI KURUOĞLU N., ÖZDEMİR O., Belahsene S., Martinez A., Ramdane A.

XL BRAZILIAN MEETING ON NUCLEAR PHYSICS, Sao Paulo, Brazil, 03 September 2017, pp.1, (Full Text)

6. MBE tekniği ile büyütülmüş p-i-n GaN yapıdaki Ni-63 radyasyon etkisinin empedans spektroskopisiyle incelenmesi

BOZKURT K., AYARCI KURUOĞLU N., ÖZDEMİR O.

XI. Ulusal Nükleer Bilimler ve Teknolojileri Kongresi, Aydın, Turkey, 12 October 2016, (Summary Text)

7. Betavoltaic study on GaN p-i-n diode with Ni-63 source

AYARCI KURUOĞLU N., ÖZDEMİR O., BOZKURT K., Ramdane A., Belahsene S., Martinez A.

Science and Applications of Thin Films, Congress & Exhibition - SATF 2016, İzmir, Turkey, 19 September 2016, (Summary Text)

8. Negatıve capacıtance in InP/InGaAsP/InP quantum dashes assessed through dc and ac electrıcal measurements.

AYARCI KURUOĞLU N., ÖZDEMİR O., BOZKURT K.

Turkish Physical Society 32nd International Physics Congress, Muğla, Turkey, 06 September 2016, (Summary Text)

9. Electrolumınescence study of MBE (Molecular Beam Epıtaxy) grown InP/InGnAnP/InAs/InP p-i-n laser heterostructure

BOZKURT K., AYARCI KURUOĞLU N., ÖZDEMİR O.

Turkish Physical Society 32nd International Physics Congress, Muğla, Turkey, 06 September 2016, (Summary Text)

10. Transport Mechanisms of InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructure

AYARCI KURUOĞLU N., ÖZDEMİR O., BOZKURT K.

2 nd International Conference on Organic Electronic Material Technologies (OEMT2016), Çanakkale, Turkey, 16 May 2016, (Summary Text)

11. Photo-voltaic Properties and Carrier Conduction Mechanisms of InP/InGaAsP/InP Quantum Well Through J-V-T Measurements

AYARCI KURUOĞLU N., ÖZDEMİR O., BOZKURT K., Ramdane A., Belahsene S., Martinez A.

SOLAR-TR3, Ankara, Turkey, 27 April 2016, (Summary Text)

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UN Sustainable Development Goals

Res. Asst. PhD Neslihan AYARCI KURUOĞLU

Publications & Works

1. Indium and hafnium chloride modified titanium oxide thin films

2. Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure

3. Determination of band tail widths in MOCVD grown InGaN single layer within GaN based p-i-n LED structure through photo-induced measurements

4. Investigation of luminescence centers inside InGaN/GaN multiple quantum well over a wide range of temperature and injection currents

5. MOCVD ile büyütülen GaN p-i-n yapısındaki sarı ışık merkezinin elektro-optik ölçümlerle incelenmesi

6. Transport and storage dynamics of 30% In-rich InGaN/GaN MQW LED p-i-n structure

7. Impact of trap states on inductive phenomena in 30% InGaN/GaN MOW LED devices

8. Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I-V and admittance measurement

9. Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructures

10. Betavoltaic study of a GaN p-i-n structure grown by metal-organic vapour phase epitaxy with a Ni-63 source

11. Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy

12. Discrimination of Carrier Conduction Mechanisms of InP/InGaAsP/InAs/InP Laser Structure Through J-V-T Measurements

1. Luminescence Properties of In-Rich InGaN/GaN Multiple Quantum Wells Light Emitting Diodes

2. Simultaneous Determination of Electron and Hole Mobility in InGaN/GaN Multi Quantum Well LED Through AC Admittance Spectroscopy

3. Light Emission Bands of InGaN/GaN MQW based LED in P-I-N Structures

4. Determination of Conduction Path in InGaN/GaN MQW LED by Current-Voltage and Admittance Measurements

5. Effect of Ni-63 Radiations on MBE Grown GaN in p-i-n Structure by Admittance Spectroscopy

6. MBE tekniği ile büyütülmüş p-i-n GaN yapıdaki Ni-63 radyasyon etkisinin empedans spektroskopisiyle incelenmesi

7. Betavoltaic study on GaN p-i-n diode with Ni-63 source

8. Negatıve capacıtance in InP/InGaAsP/InP quantum dashes assessed through dc and ac electrıcal measurements.

9. Electrolumınescence study of MBE (Molecular Beam Epıtaxy) grown InP/InGnAnP/InAs/InP p-i-n laser heterostructure

10. Transport Mechanisms of InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructure

11. Photo-voltaic Properties and Carrier Conduction Mechanisms of InP/InGaAsP/InP Quantum Well Through J-V-T Measurements

12. Investigation of Potential to Produce Electricity from Commercial Solar Cell Through Beta Particles

13. Nuclear Battery: Betavoltaic Power Source and Applications

14. Hafif Atom Numaralı Hedef İçine Gönderilen Ağır İyonların Dağılımının İncelenmesi

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Citation (WoS)

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Open Access