Arş. Gör. Dr. Neslihan AYARCI KURUOĞLU

Yayın Ağı

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler 10

1. Indium and hafnium chloride modified titanium oxide thin films

AYARCI KURUOĞLU N., CHOI F. P., ÖZDEMİR O.

Optik , cilt.283, 2023 (SCI-Expanded)

2. Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure

Özdemir O., Baş H., Ayarcı Kuruoğlu N., Bozkurt K., Aydın M., Sarcan F., et al.

Journal of Luminescence , cilt.257, 2023 (SCI-Expanded)

3. Determination of band tail widths in MOCVD grown InGaN single layer within GaN based p-i-n LED structure through photo-induced measurements

Özdemir O., Bozkurt K., Ayarcı Kuruoğlu N., Baş H., Sarcan F., Erol A., et al.

JOURNAL OF LUMINESCENCE , cilt.255, ss.119543, 2023 (SCI-Expanded)

4. Investigation of luminescence centers inside InGaN/GaN multiple quantum well over a wide range of temperature and injection currents

Ayarci Kuruoğlu N., Özdemir O., Bozkurt K., Baş H., Alshehri B., Dogheche K., et al.

JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS , cilt.00, sa.00, 2022 (SCI-Expanded)

5. Transport and storage dynamics of 30% In-rich InGaN/GaN MQW LED p-i-n structure

Özdemir O., Bozkurt K., Kuruoglu N., Baş H., Alshehrı B., Dogheche K., et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.52, 2019 (SCI-Expanded)

6. Impact of trap states on inductive phenomena in 30% InGaN/GaN MOW LED devices

BOZKURT K., ÖZDEMİR O., KURUOGLU N., ALSHEHRI B., DOGHECHE K., Gaimard Q., et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.52, sa.10, 2019 (SCI-Expanded)

7. Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I-V and admittance measurement

Kuruoglu N., ÖZDEMİR O., BOZKURT K., Sundaram S., Salvestrini J., Ougazzaden A., et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS , cilt.50, sa.50, 2017 (SCI-Expanded)

8. Betavoltaic study of a GaN p-i-n structure grown by metal-organic vapour phase epitaxy with a Ni-63 source

Kuruoglu N., ÖZDEMİR O., BOZKURT K.

THIN SOLID FILMS , cilt.636, ss.746-750, 2017 (SCI-Expanded)

9. Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy

Kuruoglu N., ÖZDEMİR O., BOZKURT K., BELAHSENE S., MARTINEZ A., RAMDANE A.

IEEE TRANSACTIONS ON ELECTRON DEVICES , cilt.64, sa.7, ss.2881-2885, 2017 (SCI-Expanded)

10. Discrimination of Carrier Conduction Mechanisms of InP/InGaAsP/InAs/InP Laser Structure Through J-V-T Measurements

Ayarci N., ÖZDEMİR O., BOZKURT K., RAMDANE A., BELAHSENE S., MARTINEZ A.

IEEE TRANSACTIONS ON ELECTRON DEVICES , cilt.63, sa.5, ss.1866-1870, 2016 (SCI-Expanded)

Diğer Dergilerde Yayınlanan Makaleler 2

1. MOCVD ile büyütülen GaN p-i-n yapısındaki sarı ışık merkezinin elektro-optik ölçümlerle incelenmesi

Ayarcı Kuruoğlu N.

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi , cilt.12, sa.1, ss.207-216, 2022 (Hakemli Dergi)

2. Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructures

Ayarcı Kuruoğlu N., Özdemir O., Bozkurt K.

Journal of Materials Science and Chemical Engineering , ss.1-9, 2017 (Hakemli Dergi)

Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 14

1. Light Emission Bands of InGaN/GaN MQW based LED in P-I-N Structures

BAŞ H., ÖZDEMİR O., AYARCI KURUOĞLU N., BOZKURT K., ALSHEHRI B., DOGHECHE K., et al.

Turkish Physical Society 34.th International Physics Congress, Muğla, Türkiye, 05 Eylül 2018, (Özet Bildiri)

2. Determination of Conduction Path in InGaN/GaN MQW LED by Current-Voltage and Admittance Measurements

ÖZDEMİR O., AYARCI KURUOĞLU N., BOZKURT K., BAŞ H., ALSHEHRI B., DOGHECHE K., et al.

Turkish Physical Society 34.th International Physics Congress, Muğla, Türkiye, 05 Eylül 2018, (Özet Bildiri)

3. Luminescence Properties of In-Rich InGaN/GaN Multiple Quantum Wells Light Emitting Diodes

BOZKURT K., ÖZDEMİR O., AYARCI KURUOĞLU N., ALSHEHRI B., DOGHECHE K., GAIMARD Q., et al.

Turkish Physical Society 34.th International Physics Congress, Muğla, Türkiye, 05 Eylül 2018, (Özet Bildiri)

4. Simultaneous Determination of Electron and Hole Mobility in InGaN/GaN Multi Quantum Well LED Through AC Admittance Spectroscopy

AYARCI KURUOĞLU N., ÖZDEMİR O., BOZKURT K., ALSHEHRI B., DOGHECHE K., GAIMARD Q., et al.

Turkish Physical Society 34.th International Physics Congress, Muğla, Türkiye, 05 Eylül 2018, (Özet Bildiri)

11. Photo-voltaic Properties and Carrier Conduction Mechanisms of InP/InGaAsP/InP Quantum Well Through J-V-T Measurements

AYARCI KURUOĞLU N., ÖZDEMİR O., BOZKURT K., Ramdane A., Belahsene S., Martinez A.

SOLAR-TR3, Ankara, Türkiye, 27 Nisan 2016, (Özet Bildiri)

Metrikler

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Açık Erişim

BM Sürdürülebilir Kalkınma Amaçları

Arş. Gör. Dr. Neslihan AYARCI KURUOĞLU

Yayınlar & Eserler

1. Indium and hafnium chloride modified titanium oxide thin films

2. Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure

3. Determination of band tail widths in MOCVD grown InGaN single layer within GaN based p-i-n LED structure through photo-induced measurements

4. Investigation of luminescence centers inside InGaN/GaN multiple quantum well over a wide range of temperature and injection currents

5. Transport and storage dynamics of 30% In-rich InGaN/GaN MQW LED p-i-n structure

6. Impact of trap states on inductive phenomena in 30% InGaN/GaN MOW LED devices

7. Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I-V and admittance measurement

8. Betavoltaic study of a GaN p-i-n structure grown by metal-organic vapour phase epitaxy with a Ni-63 source

9. Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy

10. Discrimination of Carrier Conduction Mechanisms of InP/InGaAsP/InAs/InP Laser Structure Through J-V-T Measurements

1. MOCVD ile büyütülen GaN p-i-n yapısındaki sarı ışık merkezinin elektro-optik ölçümlerle incelenmesi

2. Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructures

1. Light Emission Bands of InGaN/GaN MQW based LED in P-I-N Structures

2. Determination of Conduction Path in InGaN/GaN MQW LED by Current-Voltage and Admittance Measurements

3. Luminescence Properties of In-Rich InGaN/GaN Multiple Quantum Wells Light Emitting Diodes

4. Simultaneous Determination of Electron and Hole Mobility in InGaN/GaN Multi Quantum Well LED Through AC Admittance Spectroscopy

5. Effect of Ni-63 Radiations on MBE Grown GaN in p-i-n Structure by Admittance Spectroscopy

6. MBE tekniği ile büyütülmüş p-i-n GaN yapıdaki Ni-63 radyasyon etkisinin empedans spektroskopisiyle incelenmesi

7. Betavoltaic study on GaN p-i-n diode with Ni-63 source

8. Electrolumınescence study of MBE (Molecular Beam Epıtaxy) grown InP/InGnAnP/InAs/InP p-i-n laser heterostructure

9. Negatıve capacıtance in InP/InGaAsP/InP quantum dashes assessed through dc and ac electrıcal measurements.

10. Transport Mechanisms of InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructure

11. Photo-voltaic Properties and Carrier Conduction Mechanisms of InP/InGaAsP/InP Quantum Well Through J-V-T Measurements

12. Investigation of Potential to Produce Electricity from Commercial Solar Cell Through Beta Particles

13. Nuclear Battery: Betavoltaic Power Source and Applications

14. Hafif Atom Numaralı Hedef İçine Gönderilen Ağır İyonların Dağılımının İncelenmesi

Yayın

Yayın (WoS)

Yayın (Scopus)

Atıf (WoS)

H-İndeks (WoS)

Atıf (Scopus)

H-İndeks (Scopus)

Atıf (Scholar)

H-İndeks (Scholar)

Proje

Açık Erişim