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34
Açık Erişim
13
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4442
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23.06.2025
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2.06.2025
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9.04.2025
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9.04.2025
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28.03.2025
Dosya İndir
Eğitim Bilgileri
2016 - 2017
2016 - 2017Post Doktora
Ohio State University, Electrical And Computer Engineering, Amerika Birleşik Devletleri
2011 - 2016
2011 - 2016Doktora
Ohio State University, Electrical And Computer Engineering, Amerika Birleşik Devletleri
2009 - 2011
2009 - 2011Yüksek Lisans
Ohio State University, Electrical And Computer Engineering, Amerika Birleşik Devletleri
2003 - 2008
2003 - 2008Lisans
Gaziantep Üniversitesi, Elektrik - Elektronik Muh., Türkiye
Yaptığı Tezler
2016
2016Doktora
Nanoscale Electron Transport Engineering for GaN Optoelectronic Devices
Ohio State University, Electrical And Computer Engineering, Faculty Of Engineering
2011
2011Yüksek Lisans
N-Polar III-Nitride Optoelectronic Devices
Ohio State University, Electrical And Computer Engineering, Faculty Of Engineering
Yabancı Diller
A1 Başlangıç
A1 BaşlangıçAlmanca
C1 İleri
C1 İleriİngilizce
Araştırma Alanları
Elektrik-Elektronik Mühendisliği
Optoelektronik Malzeme ve Aygıtlar
Yarı İletken Malzeme ve Aygıtlar
Nanomalzemeler
Mühendislik ve Teknoloji
Akademik Unvanlar / Görevler
2018 - Devam Ediyor
2018 - Devam EdiyorDr. Öğr. Üyesi
Yıldız Teknik Üniversitesi, Kimya-Metalurji Fakültesi, Met.ve Malzeme Müh.Böl.
SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler
2025
20251. Characteristics of Single Crystalline Rutile GeO2 Film Grown on Sapphire by Chemical Vapor Deposition with a high growth rate ∼2.2 µm/hr
Golbasi F., Liu B., Hwang J., AKYOL F.
Journal of Alloys and Compounds
, cilt.1014, 2025 (SCI-Expanded)
2024
20242. Carrier transport in LPCVD grown Ge-doped β-Ga2O3/4H-SiC isotype heterojunction
Saquib T., AKYOL F., Ozden H., Somaiah N., Sahoo J., Muralidharan R., et al.
Journal of Applied Physics
, cilt.135, sa.6, 2024 (SCI-Expanded)
2024
20243. Chemical vapor deposition growth of β-Ga2O3 on Si- and C- face off-axis 4H–SiC at high temperature
AKYOL F., Ozden H.
Materials Science in Semiconductor Processing
, cilt.170, 2024 (SCI-Expanded)
2022
20224. Close oxygen coupled low-pressure chemical vapor deposition growth of high quality beta - Ga2O3 on sapphire
AKYOL F., DEMİR İ.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, cilt.146, 2022 (SCI-Expanded)
2020
20205. Simulation of beta-Ga2O3 vertical Schottky diode based photodetectors revealing average hole mobility of 20cm(2)V(-1)s(-1)
AKYOL F.
JOURNAL OF APPLIED PHYSICS
, cilt.127, sa.7, 2020 (SCI-Expanded)
2018
20186. Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
Zhang Y., Jamal-Eddine Z., Akyol F., Bajaj S., Johnson J. M., Calderon G., et al.
APPLIED PHYSICS LETTERS
, cilt.112, sa.7, 2018 (SCI-Expanded)
2018
20187. High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm
Bajaj S., ALLERMAN A., ARMSTRONG A., Razzak T., Talesara V., Sun W., et al.
IEEE ELECTRON DEVICE LETTERS
, cilt.39, sa.2, ss.256-259, 2018 (SCI-Expanded)
2017
20178. Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content
Akyol F., Zhang Y., Krishnamoorthy S., Rajan S.
APPLIED PHYSICS EXPRESS
, cilt.10, sa.12, 2017 (SCI-Expanded)
2017
20179. Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity
Bajaj S., Yang Z., Akyol F., PARK P. S., Zhang Y., Price A. L., et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES
, cilt.64, sa.8, ss.3114-3119, 2017 (SCI-Expanded)
2017
201710. Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs
Zhang Y., Krishnamoorthy S., Akyol F., Johnson J. M., ALLERMAN A. A., MOSELEY M. W., et al.
APPLIED PHYSICS LETTERS
, cilt.111, sa.5, 2017 (SCI-Expanded)
2017
201711. Tunnel-injected sub-260nm ultraviolet light emitting diodes
Zhang Y., Krishnamoorthy S., Akyol F., Bajaj S., ALLERMAN A. A., MOSELEY M. W., et al.
APPLIED PHYSICS LETTERS
, cilt.110, sa.20, 2017 (SCI-Expanded)
2016
201612. Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes
Zhang Y., Krishnamoorthy S., Akyol F., ALLERMAN A. A., MOSELEY M. W., ARMSTRONG A. M., et al.
APPLIED PHYSICS LETTERS
, cilt.109, sa.19, 2016 (SCI-Expanded)
2016
201613. AlGaN channel field effect transistors with graded heterostructure ohmic contacts
Bajaj S., Akyol F., Krishnamoorthy S., Zhang Y., Rajan S.
APPLIED PHYSICS LETTERS
, cilt.109, sa.13, 2016 (SCI-Expanded)
2016
201614. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions
Zhang Y., Krishnamoorthy S., Akyol F., ALLERMAN A. A., MOSELEY M. W., ARMSTRONG A. M., et al.
APPLIED PHYSICS LETTERS
, cilt.109, sa.12, 2016 (SCI-Expanded)
2016
201615. Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs
Zhang Y., ALLERMAN A. A., Krishnamoorthy S., Akyol F., MOSELEY M. W., ARMSTRONG A. M., et al.
APPLIED PHYSICS EXPRESS
, cilt.9, sa.5, 2016 (SCI-Expanded)
2016
201616. Low-resistance GaN tunnel homojunctions with 150 kA/cm(2) current and repeatable negative differential resistance
Akyol F., Krishnamoorthy S., Zhang Y., Johnson J., Hwang J., Rajan S.
APPLIED PHYSICS LETTERS
, cilt.108, sa.13, 2016 (SCI-Expanded)
2015
201517. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors
Bajaj S., Shoron O. F., Park P. S., Krishnamoorthy S., Akyol F., Hung T., et al.
APPLIED PHYSICS LETTERS
, cilt.107, sa.15, 2015 (SCI-Expanded)
2015
201518. GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions
Akyol F., Krishnamoorthy S., Zhang Y., Rajan S.
APPLIED PHYSICS EXPRESS
, cilt.8, sa.8, 2015 (SCI-Expanded)
2015
201519. Interband tunneling for hole injection in III-nitride ultraviolet emitters
Zhang Y., Krishnamoorthy S., Johnson J. M., Akyol F., ALLERMAN A., MOSELEY M. W., et al.
APPLIED PHYSICS LETTERS
, cilt.106, sa.14, 2015 (SCI-Expanded)
2014
201420. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes
Krishnamoorthy S., Akyol F., Rajan S.
APPLIED PHYSICS LETTERS
, cilt.105, sa.14, 2014 (SCI-Expanded)
2013
201321. Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop
Akyol F., Krishnamoorthy S., Rajan S.
APPLIED PHYSICS LETTERS
, cilt.103, sa.8, 2013 (SCI-Expanded)
2013
201322. Low resistance GaN/InGaN/GaN tunnel junctions
Krishnamoorthy S., Akyol F., Park P. S., Rajan S.
APPLIED PHYSICS LETTERS
, cilt.102, sa.11, 2013 (SCI-Expanded)
2010
201023. Polarization-engineered GaN/InGaN/GaN tunnel diodes
Krishnamoorthy S., Nath D. N., Akyol F., Park P. S., Esposto M., Rajan S.
APPLIED PHYSICS LETTERS
, cilt.97, sa.20, 2010 (SCI-Expanded)
Diğer Dergilerde Yayınlanan Makaleler
2021
20211. Investigating the effect of self-trapped holes in the current gain mechanism of beta-Ga2O3 Schottky diode photodetectors
AKYOL F.
TURKISH JOURNAL OF PHYSICS
, cilt.45, sa.3, ss.169-177, 2021 (ESCI)
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler
2022
20221. Epitaxial Growth of Monoclinic Gallium Oxide (β-Ga2O3) Layers on 4H- Silicon Carbide (SiC)
Özden H., AKYOL F.
IInternational Marmara Sciences Congress 2022, Kocaeli, Türkiye, 9 - 10 Aralık 2022, (Özet Bildiri)
2020
20202. Growth of single crystal Ga2O3 by customized low pressure chemical deposition
AKYOL F.
Global conference on Material Sciences, İstanbul, Türkiye, 30 Ekim - 01 Kasım 2020, (Özet Bildiri)
2018
20183. Tunnel-injected ultraviolet light-emitting diodes (Conference Presentation)
RAJAN S., ZHANG Y., JAMAL EDDİE Z., AKYOL F., HWANG J., JOHNSON J.
Gallium Nitride Materials and Devices XIII, San Francisco, United States, Amerika Birleşik Devletleri, 27 Ocak - 01 Şubat 2018, cilt.10532
2017
20174. Small-Signal Characteristics of Graded AlGaN Channel PolFETs
BAJAJ S., YANG Z., AKYOL F., PARK P. S., ZHANG Y., SOHEL S. H., et al.
2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), South Bend, 25 - 28 Haziran 2017
2016
20165. Ultra-Wide Bandgap AlGaN Channel MISFET with Polarization Engineered Ohmics
BAJAJ S., AKYOL F., KRISHNAMOORTHY S., ZHANG Y., ARMSTRONG A., ALTERMAN A., et al.
2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), Newark, 19 - 22 Haziran 2016
2015
20156. Density-Dependent Electron Transport for Accurate Modeling of AIGaN/GaN HEMTs
BAJAJ S., SHORON O. F., PARK P. S., KRISHNAMOORTHY S., AKYOL F., HUNG T. H., et al.
2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), Columbus, 21 - 24 Haziran 2015, ss.33-34
2015
20157. Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs
ZHANG Y., KRISHNAMOORTHY S., AKYOL F., KHANDAKER S., ALLERMAN A., MOSELEY M. W., et al.
2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), Columbus, 21 - 24 Haziran 2015, ss.69-70
2015
20158. Power Switching Transistors Based on GaN and AlGaN Channels
Bajaj S., Hung T., Akyol F., Krishnamoorthy S., Khandaker S., ARMSTRONG A., et al.
3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Virginia, Amerika Birleşik Devletleri, 2 - 04 Kasım 2015, ss.16-20
2014
20149. III-nitride tunnel junctions for efficient solid state lighting
Krishnamoorthy S., Akyol F., Rajan S.
Conference on Gallium Nitride Materials and Devices IX, San-Francisco, Kostarika, 3 - 06 Şubat 2014, cilt.8986
Kitaplar
2017
20171. Gallium Nitride–Based Interband Tunnel Junctions
AKYOL F.
Gallium Nitride (GaN) Physics, Devices, and Technology, Farid Medjdoub, Editör, Crc Press, Florida, Boca Raton, ss.299-326, 2017
Desteklenen Projeler
2021 - 2026
2021 - 2026
European Network for Innovative and Advanced Epitaxy
TÜBİTAK - AB COST Projesi
(Proje Özeti)
Akyol F., Demir I.(Yürütücü)
2022 - 2025
2022 - 2025Ultra Geniş Bant Aralıklı Rutil-Geo2 Tek Kristal Yapıların Düşük Basınçlı Kimyasal Buhar Biriktirme Yöntemiyle Büyütülmesi Ve Karakterizasyonu
TÜBİTAK Projesi , 1001 - Bilimsel ve Teknolojik Araştırma Projelerini Destekleme Programı
Akyol F. (Yürütücü), Demir İ., Gür E.
2023 - 2024
2023 - 2024Düşük Basınçlı Kimyasal Buhar Biriktirme Sistemi Kullanılarak Üretilen Geniş Enerji Bant Aralıklı Ga2O3 Yarı İletkeniyle Elektronik Ve Optoelektronik Aygıt Üretilmesi
Yükseköğretim Kurumları Destekli Proje , BAP Diğer
AKYOL F. (Yürütücü), ERSUNDU A. E., ÇELİKBİLEK ERSUNDU M., NATH D. N.
2022 - 2023
2022 - 2023Monoklinik Galyum Oksit Beta-Ga2O3 tabakalarının 4H Silisyum Karbür SiC üzerine epitaksiyel elde edilmesi
Yükseköğretim Kurumları Destekli Proje , BAP Y.Lisans
AKYOL F. (Yürütücü), Özden H.
2021 - 2022
2021 - 2022Monoklinik Galyum Oksit (ß-Ga2 O3) Tabakalarının 4h- Silisyum Karbür (Sic) Üzerine Epitaksiyel Elde Edilmesi
TÜBİTAK Projesi , 1002 - Hızlı Destek Programı
Akyol F. (Yürütücü)
2019 - 2022
2019 - 2022Low Pressure Chemical Vapor Deposition of Ga2O3
TÜBİTAK Projesi , 3501 - Ulusal Genç Araştırmacı Kariyer Geliştirme Programı
Akyol F. (Yürütücü)
Patent
2018
2018