Publications & Works

Articles Published in Journals That Entered SCI, SSCI and AHCI Indexes

Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.64, no.8, pp.3114-3119, 2017 (Journal Indexed in SCI) identifier identifier

Low resistance GaN/InGaN/GaN tunnel junctions

APPLIED PHYSICS LETTERS, vol.102, no.11, 2013 (Journal Indexed in SCI) identifier identifier

Articles Published in Other Journals

Refereed Congress / Symposium Publications in Proceedings

Growth of single crystal Ga2O3 by customized low pressure chemical deposition

Global conference on Material Sciences, İstanbul, Turkey, 30 October - 01 November 2020

Tunnel-injected ultraviolet light-emitting diodes (Conference Presentation)

Gallium Nitride Materials and Devices XIII, San Francisco, United States, United States Of America, 27 January - 01 February 2018, vol.10532

Small-Signal Characteristics of Graded AlGaN Channel PolFETs

2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), South Bend, 25 - 28 June 2017 identifier

Ultra-Wide Bandgap AlGaN Channel MISFET with Polarization Engineered Ohmics

2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), Newark, 19 - 22 June 2016

Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs

2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), Columbus, 21 - 24 June 2015, pp.69-70 identifier identifier

Density-Dependent Electron Transport for Accurate Modeling of AIGaN/GaN HEMTs

2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), Columbus, 21 - 24 June 2015, pp.33-34

Power Switching Transistors Based on GaN and AlGaN Channels

3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Virginia, United States Of America, 2 - 04 November 2015, pp.16-20 identifier identifier

III-nitride tunnel junctions for efficient solid state lighting

Conference on Gallium Nitride Materials and Devices IX, San-Francisco, Costa Rica, 3 - 06 February 2014, vol.8986 identifier identifier

Books & Book Chapters

Gallium Nitride–Based Interband Tunnel Junctions

in: Gallium Nitride (GaN) Physics, Devices, and Technology, Farid Medjdoub, Editor, Crc Press, Florida, Boca Raton, pp.299-326, 2017