Doç. Dr. Fatih AKYOL

Yayın Ağı

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Characteristics of Single Crystalline Rutile GeO2 Film Grown on Sapphire by Chemical Vapor Deposition with a high growth rate ∼2.2 µm/hr

Golbasi F., Liu B., Hwang J., AKYOL F.

Journal of Alloys and Compounds , cilt.1014, 2025 (SCI-Expanded)

Carrier transport in LPCVD grown Ge-doped β-Ga2O3/4H-SiC isotype heterojunction

Saquib T., AKYOL F., Ozden H., Somaiah N., Sahoo J., Muralidharan R., et al.

Journal of Applied Physics , cilt.135, sa.6, 2024 (SCI-Expanded)

Chemical vapor deposition growth of β-Ga2O3 on Si- and C- face off-axis 4H–SiC at high temperature

AKYOL F., Ozden H.

Materials Science in Semiconductor Processing , cilt.170, 2024 (SCI-Expanded)

Close oxygen coupled low-pressure chemical vapor deposition growth of high quality beta - Ga2O3 on sapphire

AKYOL F., DEMİR İ.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.146, 2022 (SCI-Expanded)

Simulation of beta-Ga2O3 vertical Schottky diode based photodetectors revealing average hole mobility of 20cm(2)V(-1)s(-1)

AKYOL F.

JOURNAL OF APPLIED PHYSICS , cilt.127, sa.7, 2020 (SCI-Expanded) Sürdürülebilir Kalkınma

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

Zhang Y., Jamal-Eddine Z., Akyol F., Bajaj S., Johnson J. M., Calderon G., et al.

APPLIED PHYSICS LETTERS , cilt.112, sa.7, 2018 (SCI-Expanded)

High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

Bajaj S., ALLERMAN A., ARMSTRONG A., Razzak T., Talesara V., Sun W., et al.

IEEE ELECTRON DEVICE LETTERS , cilt.39, sa.2, ss.256-259, 2018 (SCI-Expanded)

Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content

Akyol F., Zhang Y., Krishnamoorthy S., Rajan S.

APPLIED PHYSICS EXPRESS , cilt.10, sa.12, 2017 (SCI-Expanded)

Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity

Bajaj S., Yang Z., Akyol F., PARK P. S., Zhang Y., Price A. L., et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES , cilt.64, sa.8, ss.3114-3119, 2017 (SCI-Expanded)

Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

Zhang Y., Krishnamoorthy S., Akyol F., Johnson J. M., ALLERMAN A. A., MOSELEY M. W., et al.

APPLIED PHYSICS LETTERS , cilt.111, sa.5, 2017 (SCI-Expanded)

Tunnel-injected sub-260nm ultraviolet light emitting diodes

Zhang Y., Krishnamoorthy S., Akyol F., Bajaj S., ALLERMAN A. A., MOSELEY M. W., et al.

APPLIED PHYSICS LETTERS , cilt.110, sa.20, 2017 (SCI-Expanded)

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

Zhang Y., Krishnamoorthy S., Akyol F., ALLERMAN A. A., MOSELEY M. W., ARMSTRONG A. M., et al.

APPLIED PHYSICS LETTERS , cilt.109, sa.19, 2016 (SCI-Expanded)

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

Bajaj S., Akyol F., Krishnamoorthy S., Zhang Y., Rajan S.

APPLIED PHYSICS LETTERS , cilt.109, sa.13, 2016 (SCI-Expanded)

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

Zhang Y., Krishnamoorthy S., Akyol F., ALLERMAN A. A., MOSELEY M. W., ARMSTRONG A. M., et al.

APPLIED PHYSICS LETTERS , cilt.109, sa.12, 2016 (SCI-Expanded)

Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs

Zhang Y., ALLERMAN A. A., Krishnamoorthy S., Akyol F., MOSELEY M. W., ARMSTRONG A. M., et al.

APPLIED PHYSICS EXPRESS , cilt.9, sa.5, 2016 (SCI-Expanded)

Low-resistance GaN tunnel homojunctions with 150 kA/cm(2) current and repeatable negative differential resistance

Akyol F., Krishnamoorthy S., Zhang Y., Johnson J., Hwang J., Rajan S.

APPLIED PHYSICS LETTERS , cilt.108, sa.13, 2016 (SCI-Expanded)

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Bajaj S., Shoron O. F., Park P. S., Krishnamoorthy S., Akyol F., Hung T., et al.

APPLIED PHYSICS LETTERS , cilt.107, sa.15, 2015 (SCI-Expanded)

GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions

Akyol F., Krishnamoorthy S., Zhang Y., Rajan S.

APPLIED PHYSICS EXPRESS , cilt.8, sa.8, 2015 (SCI-Expanded)

Interband tunneling for hole injection in III-nitride ultraviolet emitters

Zhang Y., Krishnamoorthy S., Johnson J. M., Akyol F., ALLERMAN A., MOSELEY M. W., et al.

APPLIED PHYSICS LETTERS , cilt.106, sa.14, 2015 (SCI-Expanded)

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

Krishnamoorthy S., Akyol F., Rajan S.

APPLIED PHYSICS LETTERS , cilt.105, sa.14, 2014 (SCI-Expanded)

Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop

Akyol F., Krishnamoorthy S., Rajan S.

APPLIED PHYSICS LETTERS , cilt.103, sa.8, 2013 (SCI-Expanded)

Low resistance GaN/InGaN/GaN tunnel junctions

Krishnamoorthy S., Akyol F., Park P. S., Rajan S.

APPLIED PHYSICS LETTERS , cilt.102, sa.11, 2013 (SCI-Expanded)

Polarization-engineered GaN/InGaN/GaN tunnel diodes

Krishnamoorthy S., Nath D. N., Akyol F., Park P. S., Esposto M., Rajan S.

APPLIED PHYSICS LETTERS , cilt.97, sa.20, 2010 (SCI-Expanded)

Diğer Dergilerde Yayınlanan Makaleler

Investigating the effect of self-trapped holes in the current gain mechanism of beta-Ga2O3 Schottky diode photodetectors

AKYOL F.

TURKISH JOURNAL OF PHYSICS , cilt.45, sa.3, ss.169-177, 2021 (ESCI)

Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler

Epitaxial Growth of Monoclinic Gallium Oxide (β-Ga2O3) Layers on 4H- Silicon Carbide (SiC)

Özden H., AKYOL F.

IInternational Marmara Sciences Congress 2022, Kocaeli, Türkiye, 9 - 10 Aralık 2022

Growth of single crystal Ga2O3 by customized low pressure chemical deposition

AKYOL F.

Global conference on Material Sciences, İstanbul, Türkiye, 30 Ekim - 01 Kasım 2020, (Özet Bildiri)

Tunnel-injected ultraviolet light-emitting diodes (Conference Presentation)

RAJAN S., ZHANG Y., JAMAL EDDİE Z., AKYOL F., HWANG J., JOHNSON J.

Gallium Nitride Materials and Devices XIII, San Francisco, United States, Amerika Birleşik Devletleri, 27 Ocak - 01 Şubat 2018, cilt.10532

Small-Signal Characteristics of Graded AlGaN Channel PolFETs

BAJAJ S., YANG Z., AKYOL F., PARK P. S., ZHANG Y., SOHEL S. H., et al.

2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), South Bend, 25 - 28 Haziran 2017

Ultra-Wide Bandgap AlGaN Channel MISFET with Polarization Engineered Ohmics

BAJAJ S., AKYOL F., KRISHNAMOORTHY S., ZHANG Y., ARMSTRONG A., ALTERMAN A., et al.

2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), Newark, 19 - 22 Haziran 2016

Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs

ZHANG Y., KRISHNAMOORTHY S., AKYOL F., KHANDAKER S., ALLERMAN A., MOSELEY M. W., et al.

2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), Columbus, 21 - 24 Haziran 2015, ss.69-70

Density-Dependent Electron Transport for Accurate Modeling of AIGaN/GaN HEMTs

BAJAJ S., SHORON O. F., PARK P. S., KRISHNAMOORTHY S., AKYOL F., HUNG T. H., et al.

2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), Columbus, 21 - 24 Haziran 2015, ss.33-34

Power Switching Transistors Based on GaN and AlGaN Channels

Bajaj S., Hung T., Akyol F., Krishnamoorthy S., Khandaker S., ARMSTRONG A., et al.

3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Virginia, Amerika Birleşik Devletleri, 2 - 04 Kasım 2015, ss.16-20

III-nitride tunnel junctions for efficient solid state lighting

Krishnamoorthy S., Akyol F., Rajan S.

Conference on Gallium Nitride Materials and Devices IX, San-Francisco, Kostarika, 3 - 06 Şubat 2014, cilt.8986

Kitaplar

Gallium Nitride–Based Interband Tunnel Junctions

AKYOL F.

Gallium Nitride (GaN) Physics, Devices, and Technology, Farid Medjdoub, Editör, Crc Press, Florida, Boca Raton, ss.299-326, 2017

Metrikler

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931

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1023

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BM Sürdürülebilir Kalkınma Amaçları

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