Yayınlar & Eserler

Yayın Ağı

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler

Carrier transport in LPCVD grown Ge-doped β-Ga2O3/4H-SiC isotype heterojunction

Saquib T., AKYOL F., Ozden H., Somaiah N., Sahoo J., Muralidharan R., et al.
Journal of Applied Physics , cilt.135, sa.6, 2024 (SCI-Expanded) Creative Commons License identifier

Chemical vapor deposition growth of β-Ga2O3 on Si- and C- face off-axis 4H–SiC at high temperature

AKYOL F., Ozden H.
Materials Science in Semiconductor Processing , cilt.170, 2024 (SCI-Expanded) identifier

Close oxygen coupled low-pressure chemical vapor deposition growth of high quality beta - Ga2O3 on sapphire

AKYOL F., DEMİR İ.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , cilt.146, 2022 (SCI-Expanded) identifier identifier

Simulation of beta-Ga2O3 vertical Schottky diode based photodetectors revealing average hole mobility of 20cm(2)V(-1)s(-1)

AKYOL F.
JOURNAL OF APPLIED PHYSICS , cilt.127, sa.7, 2020 (SCI-Expanded) Sürdürülebilir Kalkınma identifier identifier

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

Zhang Y., Jamal-Eddine Z., Akyol F., Bajaj S., Johnson J. M., Calderon G., et al.
APPLIED PHYSICS LETTERS , cilt.112, sa.7, 2018 (SCI-Expanded) identifier identifier

High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

Bajaj S., ALLERMAN A., ARMSTRONG A., Razzak T., Talesara V., Sun W., et al.
IEEE ELECTRON DEVICE LETTERS , cilt.39, sa.2, ss.256-259, 2018 (SCI-Expanded) identifier identifier

Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content

Akyol F., Zhang Y., Krishnamoorthy S., Rajan S.
APPLIED PHYSICS EXPRESS , cilt.10, sa.12, 2017 (SCI-Expanded) identifier identifier

Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity

Bajaj S., Yang Z., Akyol F., PARK P. S., Zhang Y., Price A. L., et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES , cilt.64, sa.8, ss.3114-3119, 2017 (SCI-Expanded) identifier identifier

Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

Zhang Y., Krishnamoorthy S., Akyol F., Johnson J. M., ALLERMAN A. A., MOSELEY M. W., et al.
APPLIED PHYSICS LETTERS , cilt.111, sa.5, 2017 (SCI-Expanded) Creative Commons License identifier identifier

Tunnel-injected sub-260nm ultraviolet light emitting diodes

Zhang Y., Krishnamoorthy S., Akyol F., Bajaj S., ALLERMAN A. A., MOSELEY M. W., et al.
APPLIED PHYSICS LETTERS , cilt.110, sa.20, 2017 (SCI-Expanded) Creative Commons License identifier identifier

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

Zhang Y., Krishnamoorthy S., Akyol F., ALLERMAN A. A., MOSELEY M. W., ARMSTRONG A. M., et al.
APPLIED PHYSICS LETTERS , cilt.109, sa.19, 2016 (SCI-Expanded) Creative Commons License identifier identifier

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

Bajaj S., Akyol F., Krishnamoorthy S., Zhang Y., Rajan S.
APPLIED PHYSICS LETTERS , cilt.109, sa.13, 2016 (SCI-Expanded) Creative Commons License identifier identifier

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

Zhang Y., Krishnamoorthy S., Akyol F., ALLERMAN A. A., MOSELEY M. W., ARMSTRONG A. M., et al.
APPLIED PHYSICS LETTERS , cilt.109, sa.12, 2016 (SCI-Expanded) Creative Commons License identifier identifier

Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs

Zhang Y., ALLERMAN A. A., Krishnamoorthy S., Akyol F., MOSELEY M. W., ARMSTRONG A. M., et al.
APPLIED PHYSICS EXPRESS , cilt.9, sa.5, 2016 (SCI-Expanded) Creative Commons License identifier identifier

Low-resistance GaN tunnel homojunctions with 150 kA/cm(2) current and repeatable negative differential resistance

Akyol F., Krishnamoorthy S., Zhang Y., Johnson J., Hwang J., Rajan S.
APPLIED PHYSICS LETTERS , cilt.108, sa.13, 2016 (SCI-Expanded) Creative Commons License identifier identifier

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Bajaj S., Shoron O. F., Park P. S., Krishnamoorthy S., Akyol F., Hung T., et al.
APPLIED PHYSICS LETTERS , cilt.107, sa.15, 2015 (SCI-Expanded) Creative Commons License identifier identifier

GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions

Akyol F., Krishnamoorthy S., Zhang Y., Rajan S.
APPLIED PHYSICS EXPRESS , cilt.8, sa.8, 2015 (SCI-Expanded) identifier identifier

Interband tunneling for hole injection in III-nitride ultraviolet emitters

Zhang Y., Krishnamoorthy S., Johnson J. M., Akyol F., ALLERMAN A., MOSELEY M. W., et al.
APPLIED PHYSICS LETTERS , cilt.106, sa.14, 2015 (SCI-Expanded) Creative Commons License identifier identifier

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

Krishnamoorthy S., Akyol F., Rajan S.
APPLIED PHYSICS LETTERS , cilt.105, sa.14, 2014 (SCI-Expanded) Creative Commons License identifier identifier

Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop

Akyol F., Krishnamoorthy S., Rajan S.
APPLIED PHYSICS LETTERS , cilt.103, sa.8, 2013 (SCI-Expanded) identifier identifier

Low resistance GaN/InGaN/GaN tunnel junctions

Krishnamoorthy S., Akyol F., Park P. S., Rajan S.
APPLIED PHYSICS LETTERS , cilt.102, sa.11, 2013 (SCI-Expanded) Creative Commons License Sürdürülebilir Kalkınma identifier identifier

Polarization-engineered GaN/InGaN/GaN tunnel diodes

Krishnamoorthy S., Nath D. N., Akyol F., Park P. S., Esposto M., Rajan S.
APPLIED PHYSICS LETTERS , cilt.97, sa.20, 2010 (SCI-Expanded) Creative Commons License identifier identifier

Diğer Dergilerde Yayınlanan Makaleler

Investigating the effect of self-trapped holes in the current gain mechanism of beta-Ga2O3 Schottky diode photodetectors

AKYOL F.
TURKISH JOURNAL OF PHYSICS , cilt.45, sa.3, ss.169-177, 2021 (ESCI) identifier identifier

Hakemli Kongre / Sempozyum Bildiri Kitaplarında Yer Alan Yayınlar

Epitaxial Growth of Monoclinic Gallium Oxide (β-Ga2O3) Layers on 4H- Silicon Carbide (SiC)

Özden H., AKYOL F.
IInternational Marmara Sciences Congress 2022, Kocaeli, Türkiye, 9 - 10 Aralık 2022

Growth of single crystal Ga2O3 by customized low pressure chemical deposition

AKYOL F.
Global conference on Material Sciences, İstanbul, Türkiye, 30 Ekim - 01 Kasım 2020

Tunnel-injected ultraviolet light-emitting diodes (Conference Presentation)

RAJAN S., ZHANG Y., JAMAL EDDİE Z., AKYOL F., HWANG J., JOHNSON J.
Gallium Nitride Materials and Devices XIII, San Francisco, United States, Amerika Birleşik Devletleri, 27 Ocak - 01 Şubat 2018, cilt.10532

Small-Signal Characteristics of Graded AlGaN Channel PolFETs

BAJAJ S., YANG Z., AKYOL F., PARK P. S., ZHANG Y., SOHEL S. H., et al.
2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), South Bend, 25 - 28 Haziran 2017 identifier

Ultra-Wide Bandgap AlGaN Channel MISFET with Polarization Engineered Ohmics

BAJAJ S., AKYOL F., KRISHNAMOORTHY S., ZHANG Y., ARMSTRONG A., ALTERMAN A., et al.
2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), Newark, 19 - 22 Haziran 2016

Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs

ZHANG Y., KRISHNAMOORTHY S., AKYOL F., KHANDAKER S., ALLERMAN A., MOSELEY M. W., et al.
2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), Columbus, 21 - 24 Haziran 2015, ss.69-70 identifier identifier

Density-Dependent Electron Transport for Accurate Modeling of AIGaN/GaN HEMTs

BAJAJ S., SHORON O. F., PARK P. S., KRISHNAMOORTHY S., AKYOL F., HUNG T. H., et al.
2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), Columbus, 21 - 24 Haziran 2015, ss.33-34

Power Switching Transistors Based on GaN and AlGaN Channels

Bajaj S., Hung T., Akyol F., Krishnamoorthy S., Khandaker S., ARMSTRONG A., et al.
3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Virginia, Amerika Birleşik Devletleri, 2 - 04 Kasım 2015, ss.16-20 identifier identifier

III-nitride tunnel junctions for efficient solid state lighting

Krishnamoorthy S., Akyol F., Rajan S.
Conference on Gallium Nitride Materials and Devices IX, San-Francisco, Kostarika, 3 - 06 Şubat 2014, cilt.8986 identifier identifier

Kitap & Kitap Bölümleri

Gallium Nitride–Based Interband Tunnel Junctions

AKYOL F.
Gallium Nitride (GaN) Physics, Devices, and Technology, Farid Medjdoub, Editör, Crc Press, Florida, Boca Raton, ss.299-326, 2017

Metrikler

Yayın

33

Atıf (WoS)

931

H-İndeks (WoS)

17

Atıf (Scopus)

1023

H-İndeks (Scopus)

17

Proje

7

Fikri Mülkiyet

1

Açık Erişim

30
BM Sürdürülebilir Kalkınma Amaçları